ELECTRONIC STRUCTURE OF BISMUTH MOLYBDENUM OXIDE SINGLE CRYSTAL Bi0.19MoO3

• 来源期刊: 中国物理(英文版)
• 学科: 物理学
• 关键词: bismuth molybdenum oxide single crystal X-ray photoemission spectroscopy electronic structure core-level structure
• 年，卷（期）: 2001,（1）
• 页码范围: 52-57
• 页数: 6页
• 分类号: O4
• 语种: 英文

摘要

Single crystal Bi0. 19MoO3 has been grown by fused salt electrolytic technique. X-ray powder diffraction shows that the unit cell parameters are: a=1.9985nm, b=0.4085nm and c=1.4437nm. The temperature dependence of resistivity demonstrates a semiconductor characteristic. X-ray photoemission spectroscopy studies provide that the valence band of Bi0.19MoO3 are made up of oxygen pπ and the r*, r and σ bonding bands formed by orbital combination. The shoulder at 0.4 eV near the top of valence band may be formed from the non-bonding dxy orbitals of some Mo atoms. The O1s core-electron spectrum reveals the presence of two inequivalent bonds of oxygen ions in Bi0.19MoO3. Bi4f core-level spectrum shows two bonding characters of Bi atoms in bismuth molybdenum oxide single crystals. Mo3d core-level spectrum could be decomposed into two kinds of valence states of molybdenum(Mo+5 and Mo+6).