Electrical Properties of the ZnO/Si Heterostructure

• 来源期刊: 中国物理快报（英文版）
• 学科: 物理学
• 年，卷（期）: 2001,（8）
• 页码范围: 1108-1110
• 页数: 3页
• 分类号: O4
• 语种: 英文

摘要

The electrical properties of a type of semiconductor heterostructure fabricated by depositing zinc oxide film on a silicon substrate are investigated. The I - V, I - T curves, and deep level transient spectra are measured. From these results, we acquire the information of the characteristics of the junction, and compute some energy levelsof the samples.