Structure and Photoluminescence of InGaAs Quantum Dots Formed on an InA1As Wetting Layer

• 来源期刊: 中国物理快报
• 学科: 物理学
• 年，卷（期）: 2001,（10）
• 所属期刊栏目: CONDENSED MATTER:ELECTRONIC STRUCTURE,ELECTRICAL,M
• 页码范围: 1411-1414
• 页数: 4页
• 分类号: O4
• 语种: 英文

摘要

We have developed a nev self-assembled quantum dot system where InGaAs dots are formed on an InAlAs wetting layer and embedded in the GaAs matrix. The structure is realized by special sample designation and demonstrated by low-temperature photoluminescence measurements. In contrast to the traditional InAs/GaAs quantum dots dominated by the ensemble effect, the temperature dependence of the photoluminescence of such a quantum dot structure behaves as decoupled quantum dots. This can be attributed to the enhanced potential confinement for the dots provided by a higher-energy barrier in the wetting layer