Storage of Photoexcited Electron-Hole Pairs in an AlAs/GaAs Heterostructure Created by Electron Transfer in Real and k Spaces

• 来源期刊: 中国物理快报（英文版）
• 学科: 物理学
• 年，卷（期）: 2002,（10）
• 页码范围: 1540-1542
• 页数: 3页
• 分类号: O4
• 语种: 英文

摘要

The storage of photoexcited electron-hole pairs is experimentally carried out and theoretically realized by trans-ferring electrons in both real and k spaces through resonant F - X in an AIAs/GaAs heterostructure. Thisis proven by the peculiar capacitance jump and hysteresis in the measured capacitance-voltage curves. Ourstructure may be used as a photonic memory cell with a long storage time and a fast retrieval of photons as well.