Intense Electronic Excitations Induced Formation of Light-emitters in C-doped SiO2 Films

• 作者: WangZhiguang~ JinYunfan XieErqing LiuJie ZhuZhiyong SunYoumei ZhangChonghong ZhaoZhiming
• 来源期刊: 近代物理研究所和兰州重离子加速器实验室年报：英文版
• 学科: 物理学
• 关键词: 强电子激发 掺碳 二氧化硅薄膜 发光体 P型单晶硅 光谱分析 重离子辐照 重离子核物理
• 年，卷（期）: 2002,（1）
• 页码范围: 50
• 页数: 1页
• 分类号: O484.1

摘要

<正> SiO2 films were thermally grown on < 111 > oriented p-type mono-crystalline silicon to about 500 nm in thickness by wet oxidation at high temperature. These SiO2 films were firstly implanted at room temperature (RT) with 120 keV C-ions and then irradiated at RT with high-energy Ar, Kr, Xe or U ions. The C-ion implantation was performed on a 200 kV heavy ion implanter and the irradiations with Ar, Kr, Xe ions were performed on the HIRFL (IMP, Lanzhou). U ion irradiations were performed on the UNILAC (GSI, Darmstadt).