Monte Carlo simulation of the behaviour of electrons during electron-assisted chemical vapour deposition of diamond

• 来源期刊: 中国物理（英文版）
• 学科: 物理学
• 关键词: Monte Carlo method chemical vapour deposition electron swarm drift velocity
• 年，卷（期）: 2002,（5）
• 页码范围: 419-424
• 页数: 6页
• 分类号: O4
• 语种: 英文

摘要

The behaviour of electrons during electron-assisted chemical vapour deposition of diamond is investigated using Monte Carlo simulation. The electron energy distribution and velocity distribution are obtained over a wide range of reduced field E/N (the ratio of the electric field to gas molecule density) from 100 to 2000 in units of 1Td=10-17Vcm2.Their effects on the diamond growth are also discussed. Themain results obtained are as follows. (1) The velocity profile is asymmetric for the component parallel to the field.Ihe velocity distribution has a peak shift in the field direction. Most electrons possess non-zero velocity parallel to the substrate. (2) The number of atomic H is a function of E/N. (3) High-quality diamond can be obtained under the condition of E/N from 50 to 800Td due to sufficient atomic H and electron bombardment.