Electroluminescence from Si/SiO2 films deposited on p-Si substrates

• 来源期刊: 中国物理（英文版）
• 学科: 物理学
• 关键词: Si/SiO2 film electroluminescence
• 年，卷（期）: 2002,（9）
• 页码范围: 960-962
• 页数: 3页
• 分类号: O4
• 语种: 英文

摘要

The structure of Au/Si/SiO2/p-Si has been fabricated using the magnetron sputtering technique. It has a verygood rectifying behaviour. Visible electroluminescence (EL) has been observed from the Au/Si/SiO2/p-Si structureat a forward bias of 5V or larger. A broad band with one peak around 650-660 nm appears in all the EL spectra ofthe structure. The effects of the thickness of the Si layer in the Si/SiO2 films and of the input electrical power on ELspectra are studied systematically.