Preparation and Properties of N-Doped p-Type ZnO Films by Solid-Source Chemical Vapour Deposition with the c-Axis Parallel to the Substrate

• 来源期刊: 中国物理快报（英文版）
• 学科: 物理学
• 年，卷（期）: 2002,（10）
• 页码范围: 1494-1497
• 页数: 4页
• 分类号: O4
• 语种: 英文

摘要

We report on N-doped p-type ZnO films with the c-axis parallel to the substrate. ZnO films were prepared onan α-A12O3 (0001) substrate by solid-source chemical vapour deposition (CVD). Zn( CH3COO)2.2H2O was usedas the precursor and CH3COONH4 as the nitrogen source. The growth temperature was varied from 300℃ C to600℃ C. The as-grown ZnO film deposited at 500° C showed p-type conduction with its resistivity of 42 Ωcrm, carrierdensity 3.7 × 1017 cm-3 and Hall mobility 1.26cm2V-1.s-1 at room temperature, which are the best propertiesfor p-type ZnO deposited by CVD. The p-type ZnO film possesses a transmittance of about 85% in the visibleregion and a bandgap of 3.21 eV at room temperature.