Interface Instability of Diamond Crystals at High Temperature and High Pressure

• 来源期刊: 中国物理快报（英文版）
• 学科: 物理学
• 年，卷（期）: 2002,（3）
• 页码范围: 419-421
• 页数: 3页
• 分类号: O4
• 语种: 英文

摘要

Diamond growth instability at high temperature and high pressure (HPHT) has been elucidated by observing the cellular interface in diamond crystals. The HPHIT diamond crystals grow layer by layer from solution of carbon in the molten catalyst. In the growth of any other crystals from solution, the growth interface is not stable and should be of the greatest significance to understand further the diamond growth mechanism. During the diamond growth, the carbon atoms are delivered to the growing diamond crystal by diffusion through a diamond crystal-solution boundary layer. In front of the boundary layer, there is a narrow constitutional supercooling zone related to the solubility difference between diamond and graphite in the molten catalyst. The diamond growth stability is broken, and the flat or planar growth interface transforms into a cellular interface due to the light supercooling. The phenomenon of solute trails in the diamonds was observed, the formation of solute trails was closely associated with the cellular interface.