A Silicon-Based Ferroelectric Capacitor for Memory Devices

• 来源期刊: 中国物理快报（英文版）
• 学科: 物理学
• 年，卷（期）: 2002,（3）
• 页码范围: 432-433
• 页数: 2页
• 分类号: O4
• 语种: 英文

摘要

We study a silicon-based Pb TiO3/Pb(Zro.53 Tio.47)O3/Pb TiO3 capacitor, prepared by an improved sol-gel method.The ferroelectric capacitor has a high remanent polarization of 15 pC/crm2 at a coercive field of about 30 k V/cm,an ultra-low leakage current density of 0.1 hA/crm2, and almost fatigue free properties. It can be used as a promising candidate for ferroelectric memory devices.