Parameter extraction for a Ti/4H-SiC Schottky diode

• 来源期刊: 中国物理（英文版）
• 学科: 物理学
• 关键词: silicon carbide interface states Schottky diodes barrier height
• 年，卷（期）: 2003,（1）
• 页码范围: 94-96
• 页数: 3页
• 分类号: O4
• 语种: 英文

摘要

Based on the MIS model, a simple method to extract parameters of SiC Schottky diodes is presented using the I-V characteristics. The interface oxide capacitance Ci is extracted for the first time, as far as we know. Parameters of 4H-SiC Schottky diodes fabricated for testing in this paper are: the ideality factor n, the series resistance Rs, the zero-field barrier height φB0, the interface state density Dit, the interface oxide capacitance Ci and the neutral level of interface states φ0.