High-Efficiency Organic Double-Quantum-Well Light-Emitting Devices Using 5,6,11,12-Tetraphenylnaphthacene Sub-monolayer as Potential Well

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2003,（6）
• 页码范围: 956-958
• 页数: 3页
• 语种: 英文

摘要

The double-quantum-well organic light-emitting devices of indium-tin-oxide (ITO)/NPB (50 nm)/rubrene (0.05 nm)/NPB(4nm)/rubrene (0.05nm)/Alqa (50nm)/LiF (0.5nm)/Al were fabricated, in which N,N-bis-(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB) is used as a barrier potential or hole transport layer, tris (8-hydroxyquinoline) aluminium (Alq3) used as electron transport layer, and 5,6,11,12-tetraphenylnaphthacene (rubrene) as a potential well and emitter. The brightness can reach 18610cd/m2 at 13 V. The maximum electroluminescent efficiency of the device was 6.61 cd/A at 7V, which was higher than that of common dope-type devices. In addition, the electroluminescence efficiency is relatively independent of the drive voltage in the range from 5 to 13 V.