Nanocrystalline silicon films prepared by laser-induced crystallization

• 来源期刊: 中国物理（英文版）
• 学科: 物理学
• 关键词: laser annealing crystallization nanocrystalline silicon
• 年，卷（期）: 2003,（1）
• 页码范围: 75-78
• 页数: 4页
• 分类号: O4
• 语种: 英文

摘要

The excimer laser-induced crystallization technique has been used to investigate the preparation of nanocrystalline silicon (nc-Si) from amorphous silicon (α-Si) thin films on silicon or glass substrates. The α-Si films without hydrogen grown by pulsed-laser deposition are chosen as precursor to avoid the problem of hydrogen effluence during annealing.Analyses have been performed by scanning electron microscopy, atomic force microscopy, Raman scattering spectroscopy and high-resolution transmission-electron microscopy. Experimental results show that silicon nanocrystals can be formed through laser annealing. The growth characters of nc-Si are strongly dependent on the laser energy density. It is shown that the volume of the molten silicon predominates essentially the grain size of nc-Si, and the surface tension of the crystallized silicon is responsible for the mechanism of nc-Si growth.