Study of far-infrared reflection and Raman scattering spectra in reactive ion, etched ZnTe

• 来源期刊: 中国物理（英文版）
• 关键词: reactive ion etched spectroscopic measurements ZnTe
• 年，卷（期）: 2003,（9）
• 页码范围: 1026-1032
• 页数: 7页
• 语种: 英文

摘要

Far-infrared reflection and Raman scattering measurements have been carried out on reactive ion,etched p-ZnTe samples.The averaged thickness of the surface damaged layer is found to be in the range of 1.0-1.5μm,and the,etch-induced defect density is in the order of 1018cm-3.The Raman intensity ratio between the second-order Raman peaks and the first-order longitudinal optical phonons reveals an increase trend with the radio frequency(rf)power.With the aid of related theories,we discuss the effects of the rf plasma power and the concentration of CH4/H2 on the damage,disorder,and the second-order Raman structures in p-ZnTe samples.