A New Structure of Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor to Suppress the Floating Body Effect

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2003,（5）
• 页码范围: 767-769
• 页数: 3页
• 语种: 英文

摘要

Considering that the silicon-on-insulator (SOI) devices have an inherent floating body effect, which may cause substantial influences in the performance of SOI device and circuit, we propose a novel device structure to suppress the floating body effect. In the new structure there is a buried p+ region under the n+ source and that region is extended to outside of the source, and this additional p+ region provides a path for accumulated holes to flow out of the body. Numerical simulations were carried out with Medici, and the output characteristics and gate characteristics were compared with those of conventional SOI counterparts. The simulated results show the suppression of floating body effect in the novel SOI device as expected.