Diode-Pumped Passively Q-Switched Yb:YAG Microchip Laser with a GaAs as Saturable Absorber

• 来源期刊: 中国物理快报(英文版)
• 年，卷（期）: 2003,（10）
• 页码范围: 1741-1743
• 页数: 3页
• 语种: 英文

摘要

A passively Q-switched Yb: YAGmicrochip laser has been constructed by using a doped GaAs as the saturable absorber as well as the output coupler. At 13.5 W of pump power the device produces high-quality 3.4μJ 52ns pulses at 1030nm with a pulse repetition rate of 7.8kHz in a TEMoo-mode.