Chemical Bond Formation in C-implanted SiO2 Films Induced by High-energy Pb-ion Irradiation

• 作者: Wang Zhiguang Zhao Zhiming A. Benyagoub M. Toulemonde F. Levesque Song Yin Jin Yunfan
• 来源期刊: 近代物理研究所和兰州重离子加速器实验室年报：英文版
• 学科: 工学
• 关键词: 离子辐照 铅离子 化学键 二氧化硅膜 诱导 高能 SIO2薄膜 离子植入
• 年，卷（期）: 2004,（1）
• 页码范围: 67
• 页数: 1页
• 分类号: TG139.8

摘要

<正>SiO2 films were firstly implanted at room temperature (RT) with 120 keV C-ions and then irradiated at RT with 950 MeV Pb ions. The C-ion implantation was performed at the 200 kV heavy ion implanter (IMP, Lanzhou) and the selected implantation doses are 2.0×1017, 5.0×1017 and 8.6×1017 C/cm2. The Pb ion irradiation was carried out at the IRASME (CIRIL-GANIL, Caen) and the irradiation fluence was in the region from 5.0×1011 to 3.8×1012 Pb/cm2. The chemical bond formation in the samples was investigated by using a Spectrum GX IR spectroscopy.