FTIR Study of C-doped SiO2 Films after High Energy Xe Ion Irradiation

• 作者: Zhao Zhiming Wang Zhiguang Jin Yunfan Song Yin Sun Youmei Zhang Chonghong Liu Jie Xie Erqing
• 来源期刊: 近代物理研究所和兰州重离子加速器实验室年报：英文版
• 学科: 物理学
• 关键词: 氙离子辐照 红外光谱技术 SIO2薄膜 兰州重离子加速器 高能 掺杂 二氧化硅薄膜 离子注入机
• 年，卷（期）: 2004,（1）
• 页码范围: 72
• 页数: 1页
• 分类号: O571.6

摘要

<正>SiO2 films were firstly implanted by 120 keV C-ions at room temperature (RT) and then irradiated at RT with 1.75 GeV Xe ions. The implantation was performed on 200 kV Heavy Ion Implanter (IMP, Lanzhou) to a dose in the range from 5.0×1016 to 8.6×1017 C/cm2. The Xe ion irradiation was carried out at HIRFL (Lanzhou) and the irradiation fluence was 5.0×1011 Xe/cm2. The new chemical bonds formed in the samples were investigated by use of micro-FTIR spectroscopy. Some parameters were given in Table 1.