Effect of SiO2 Encapsulation on the Nitrogen Reorganization in a GaNAs/GaAs Single Quantum Well

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2004,（3）
• 页码范围: 521-523
• 页数: 3页
• 语种: 英文

摘要

Effects of SiO2 encapsulation and rapid thermal annealing on the optical properties of a GaNAs/GaAs single quantum well (SQW) are studied by low-temperature photoluminescence (LTPL). After annealing at 800℃ for 30s, a blueshift of the LTPL peak energy for the SiO2-capped region is 25meV and that for the bare region is 0.8 meV. The results can attribute to the nitrogen reorganization in the GaNAs/GaAs SQW. It is also shown that the nitrogen reorganization can be obviously enhanced by SiO2 cap-layer. A simple model is used to describe the SiO2-enhanced blueshift of the LTPL peak energy. The estimated activation energy of the N atomic reorganization for the samples annealing with and without SiO2 cap-layer are 2.9eV and 3.1 eV, respectively.