A comparative study of electroluminescence from Ge/SiO2 and Si/SiO2 films

• 来源期刊: 中国物理（英文版）
• 关键词: electroluminescence Ge/SiO2 film Si/SiO2 film
• 年，卷（期）: 2004,（2）
• 页码范围: 264-267
• 页数: 4页
• 语种: 英文

摘要

Ge/SiO2 and Si/SiO2 films were deposited using the two-target alternation magnetron sputtering technique. The Au/Ge/SiO2/p-Si and Au/Si/SiO2/p-Si structures were fabricated and their electroluminescence (EL) characteristics were comparatively studied. Both Au/Ge/SiO2/p-Si and Au/Si/SiO2/p-Si structures have rectifying property. All the EL spectra from the two types of the structure have peak positions around 650-660 nm. The EL mechanisms of the structures are discussed.