Effect of nonstoichiometry on Raman scattering of VO2 films

• 来源期刊: 中国物理（英文版）
• 关键词: vanadium dioxide thin films Raman spectra nonstoichiometry RF magnetron sputtering
• 年，卷（期）: 2004,（1）
• 页码范围: 82-84
• 页数: 3页
• 语种: 英文

摘要

We report on Raman scattering of VO2 films prepared by radio frequency magnetron sputtering under different conditions. Our investigations revealed that the dominated Raman peaks shift towards high frequency for both V-rich and O-rich VO2 films, compared with the stoichiometry VO2 films. The experimental evidence is presented and the cause for nonstoichiometry dependence of Raman spectra of VO2 films is discussed.