A compact Ⅰ-Ⅴ model for lightly-doped-drain MOSFETs

• 来源期刊: 中国物理（英文版）
• 关键词: lightly-doped-drain MOSFET hot carrier effect velocity saturation hyperbolic tangent
• 年，卷（期）: 2004,（7）
• 页码范围: 1104-1109
• 页数: 6页
• 语种: 英文

摘要

A novel model for lightly-doped-drain (LDD) MOSFETs is proposed, which utilizes the empirical hyperbolic tangent function to describe the Ⅰ-Ⅴcharacteristics. The model includes the strong inversion and subthreshold mechanism, and shows a good prediction for submicron LDD MOSFET. Moreover, the model requires low computation time consumption and is suitable for design of MOSFETs devices and circuits.