X-Ray Photoelectron Spectroscopy Analysis of the Electron Beam Treated SiC Films Before and After Hydrogen Ion Irradiation

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2004,（1）
• 页码范围: 61-64
• 页数: 4页
• 语种: 英文

摘要

SiC films deposited with rf magnetron sputtering followed by electron beam alloying were irradiated by hydrogen ion with an energy of 5 keV and a dose of 1 × 1018 ions/cm2. The x-ray photoelectron spectroscopy analysis was used to investigate the irradiation effects of hydrogen ion on SiC. The results show that hydrogen ion irradiation can cause preferential sputtering of component of SiC, and activated carbon can react chemically with hydrogen to form hydrocarbon species such as methane. The related mechanism is discussed.