Fabrication of Pentacene Thin-Film Transistors with Patterned Polyimide Photoresist as Gate Dielectrics and Research of Their Degradation

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2004,（11）
• 页码范围: 2278-2280
• 页数: 3页
• 语种: 英文

摘要

Pentacene organic thin-film transistors using commercial photoresist as gate dielectrics were fabricated. The photoresist was spin-coated and directly patterned by photolithography. As a result, the fabrication processes were greatly reduced. With the characteristics of the transistors measured, the degradation of the transistors was investigated. In the search for the factors causing degradation, a transistor using poly(methyl methacrylate)as the gate dielectric was also fabricated. It is regarded that the degradation is caused by the changes at the interface between photoresist and pentacene film.