Two-dimensional temperature distribution inside a hemispherical bowl-shaped target for plasma source ion implantation

• 来源期刊: 中国物理（英文版）
• 关键词: hemispherical bowl-shaped vessel plasma source ion implantation ion heating
• 年，卷（期）: 2005,（1）
• 页码范围: 163-168
• 页数: 6页
• 语种: 英文

摘要

One important parameter for the plasma source ion implantation (PSII) process is the target temperature obtained during the surface modification. Because the power input to the target being implanted can be large, its temperature is quite high. The target temperature prediction is useful, whether the high temperature is required in the experiment.In addition, there is likely to be temperature variation across the target surface, which can lead to locally different surface properties. In this paper, we have presented a model to predict and explain the temperature distribution on a hemispherical bowl-shaped vessel during plasma source ion implantation. A two-dimensional fluid model to derive both the ion flux to the target and the energy imparted to the substrate by the ions in the plasma sheath simulation is employed. The calculated energy input and radiative heat loss are used to predict the temperature rise and variation inside the sample in the thermal model. The shape factor of the target for radiation is taken into account in the radiative energy loss. The influence of the pulse duration and the pulsing frequency on the temperature distribution is investigated in detail. Our work shows that at high pulsing frequencies the temperature of the bowl will no longer rise with the increase of the pulsing frequency.