Application of Heavy Ion Physics and Nuclear Technique——FTIR Investigation of C-implanted Crystalline SiO2 after 950 MeV Pb-ion irradiation

• 作者: A. Benyagoub Jin Yunfan Liu Chunbao M. Toulemonde Song Yin Wang Zhiguang Wei Kongfang Zang Hang Zhao Zhiming
• 来源期刊: 近代物理研究所和兰州重离子加速器实验室年报：英文版
• 学科: 工学
• 关键词: 重离子物理 二氧化硅 MEV 铅离子 红外光谱 离子辐照 植入 核技术
• 年，卷（期）: 2005,（1）
• 页码范围: 57
• 页数: 1页
• 分类号: TN304.12

摘要

<正>Crystalline SiO2(c-SiO2) samples were firstly implanted at room temperature (RT) with 120 keV Cions and then irradiated at RT with 950 MeV Pb ions. The C-ion irradiation experiments were performed on the 200 kV heavy ion implanter of IMP and the selected implantation doses are 2. 0×1017 , 5. 0×1017, 8. 6×1017 and 1. 2×1017C/cm2. The Pb ion irradiation was carried out at the IRASME (CIRIL-GANIL, Caen) and the irradiation fluencies are 5.0×1011,1. 0×1012 and 1..0×1012 Pb/cm2 , respectively. The chemical bonds formation in the samples was investigated by using a Spectrum GX IR spectroscopy.