Characterization of ZnO：In Film Prepared by Radio Frequency Sputtering

• 作者: Peng Xingping Wang Zhiguang Zang Hang Song yin Zhang Liqing Sheng Yanbing Jin Yunfan
• 来源期刊: 近代物理研究所和兰州重离子加速器实验室年报：英文版
• 学科: 工学
• 关键词: 溅射薄膜 氧化锌 半导体二极管激光器 射频 表征 宽禁带半导体 紫外激光 导电化合物
• 年，卷（期）: 2005,（1）
• 页码范围: 63-64
• 页数: 2页
• 分类号: TN248

摘要

<正>Wide band-gap semi-conducting compounds are very attractive in recent years because of the intense commercial interest in developing practical short wavelength semiconductor diode lasers for the huge market needs. ZnO has a wide band gap (3. 37 eV) and a large binding energy (60 meV) that allows efficient UV emission from excitation and makes it suitable for UV laser-emitting devices. Indium-doped ZnO (ZnO:In) films have been investigated by many researchers. It has lower electrical conductivity and bet-