Model of transit time for SiGe HBT Collector junction depletion-layer

• 来源期刊: 中国物理（英文版）
• 关键词: SiGe HBT collector depletion-layer transit time
• 年，卷（期）: 2005,（7）
• 页码范围: 1439-1443
• 页数: 5页
• 语种: 英文

摘要

The transit time through collector junction depletion-layer is an important parameter that influences AC gain and frequency performance. In SiGe heterojunction bipolar transistor (HBT) collector junction, the depletion-layer width is given in three cases. The models of collector depletion-layer transit time, considering the collector current densities and base extension effect, are established and simulated using MATLAB. The influence of the different collector j unction bias voltage, collector concentration of As or P dopant and collector width on collector junction transit time is quantitatively studied. When the collector junction bias voltage, collector doping concentration and collector width are large, the transit time is quite long. And, from the results of simulations, the influence of the collector depletion-layer transit time on frequency performance is considerable in SiGe HBT with a thin base, so it could not be ignored.