Transparent low-resistance SnO2:F films, suitable as a low-emissivity and conducting coating, have been deposited C2HsOH/50% H2O served as the starting solution. With the parameters such as substrate temperature of 450℃,distance between the nozzle and substrate of 60mm, carrier gas flow rate of 8L/min and deposition time of 5min, the optimized SnO2:F films having a sheet resistance of about 2Ω/□, were deposited repeatedly. The relationship between sheet resistances and infrared transmission spectra of SnO2:F films is shown schematically.