The influence of K4Fe(CN)6 on the photosensitivity of cubic AgCl microcrystal

• 来源期刊: 中国物理（英文版）
• 关键词: shallow electron trap photosensitivity trap depth doping concentration capture crosssection
• 年，卷（期）: 2005,（2）
• 页码范围: 404-408
• 页数: 5页
• 语种: 英文

摘要

The influence of K4Fe(CN)6 at various doping concentrations on the photosensitivity of cubic AgCl microcrystals has been investigated by using the microwave absorption and phase-sensitive measurement technique. The time behaviour of free photoelectrons in AgCl microcrystals is analysed by using computer simulation as a function of three parameters of shallow electron trap (SET) including doping concentration, trap depth and capture cross-section (CCS).It is found that the three parameters of SET play different roles on the free photoelectron decay time (FDT). After considering the threshold effects of the three parameters and their collective effects, the trap depth value, the CCS value,and the optimal doping concentration of the SET introduced by the dopant K4Fe(CN)6 in cubic AgCl microcrystals can also be determined, and the best photosensitivity of cubic AgCl can be obtained.