I-V characteristics of foilless diodes

• 来源期刊: 中国物理（英文版）
• 关键词: foilless diode I-V relation intense electron beam
• 年，卷（期）: 2005,（5）
• 页码范围: 949-952
• 页数: 4页
• 语种: 英文

摘要

Some physical characteristics of foilless diodes are obtained and analysed by numerical simulations. Relations between diode current andconfiguration parameters, i.e. diode voltage and external magnetic field, are investigated.Employing these relations and assuming that the external magnetic field is strong enough, the diode current can be approximately written as Ib=(7.5/x)(x+(0.81-x)/(1+0.7Ld2/δr))(γ0 2/3-1)3/2, in which Ld is the Anode-Cathode(AK) gap, Rc the outer radius of cathode, and Rp the radius of drifting tube; x=ln(Rp/Rc), δr=Rp- Rc. This expression is comparatively accurate for different configuration parameters and voltages; results obtained from this expression are consistent with that of numerical simulations within an error of 10%.