6H-SiC Schottky barrier source/drain NMOSFET with field-induced source/drain extension

• 来源期刊: 中国物理（英文版）
• 关键词: SBSD-MOSFET FISD sidewall 6H-Sic
• 年，卷（期）: 2005,（3）
• 页码范围: 583-585
• 页数: 3页
• 语种: 英文

摘要

A novel SiC Schottky barrier source/drain NMOSFET(SiC SBSD-NMOSFET) with field-induced source/drain(FISD) extension is proposed and demonstrated by numerical simulation for the first time. In the new device the FISD extension is induced by a metal field-plate lying on top of the passivation oxide, and the width of Schottky barrier is controllde by the metal field-plate. The new structure not only eliminates the effect of the significantly improves the on-state current. Moreover, the performance of the present device exhibits very weak dependence on the widths of sidewalls.