Surface morphology evolution of Si(110) by ion sputtering as a function of sample temperature

• 来源期刊: 中国物理（英文版）
• 关键词: sputtering surface diffusion silicon nanostructuring models of nonlinear phenomena
• 年，卷（期）: 2005,（8）
• 页码范围: 1626-1630
• 页数: 5页
• 语种: 英文

摘要

Si(110) surface morphology evolution under normal-incident Ar+ ion sputtering has been studied as a function of Si temperature with the ion energy of 1.5keV and the ion flux 20μA/cm2. During temperature rising from room temperature to 800℃, Si(110) surface morphology changes from a dim dot/hole pattern to a distinct dot one, meanwhile the surface roughness increases steadily. The usually-accepted Bradley-Harper model fails to explain these data. By taking into account the Ehrlich-Schwoebel effect in the nanostructuring process, a simulation work was conducted based on a continuum dynamic model, which reproduces the experimental results.