Photoluminescence and transmission spectra of nanocrystalline GaAs1-xSbx embedded in silica films

• 来源期刊: 中国物理（英文版）
• 关键词: nanocrystalline GaAs1-xSbx photoluminescence transmission absorption quantum confinement effect
• 年，卷（期）: 2005,（10）
• 页码范围: 2145-2148
• 页数: 4页
• 语种: 英文

摘要

The composite films of the nanocrystalline GaAs1-xSbx-SiO2 have been successfully deposited on glass and GaSb substrates by radio frequency magnetron co-sputtering. The 10K photoluminescence (PL) properties of the nanocrys-talline GaAs1-xSbx indicated that the PL peaks of the GaAs1-xSbx nanocrystals follow the quantum confinement model very closely. Optical transmittance spectra showed that there is a large blue shift of optical absorption edge in nanocrystalline GaAs1-xSbx-SiO2 composite films, as compared with that of the corresponding bulk semiconductor,which is due to the quantum confinement effect.