A percolation study of RTS noise in deep sub-micron MOSFET by Monte Carlo simulation

• 来源期刊: 中国物理（英文版）
• 关键词: MOSFET RTS noise τc/τe percolation model
• 年，卷（期）: 2005,（4）
• 页码范围: 808-811
• 页数: 4页
• 语种: 英文

摘要

Based on percolation theory and random telegraph signal (RTS) noise generation mechanism, a numerical model for RTS in deep submicron metal-oxide-semiconductor field-effect transistor (MOSFET) was presented, with which the dependence of τc/τe (where τc=capture time, τe=emission period ) on energy levels and trap depth with respect to the interface of traps can be simulated. Compared with experimental results, the simulated ones showed a good qualitative agreement.