Structure and Photoluminescence of Nano-ZnO Films Grown on a Si (100) Substrate by Oxygen- and Argon-Plasma-Assisted Thermal Evaporation of Metallic Zn

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2005,（4）
• 页码范围: 998-1001
• 页数: 4页
• 语种: 英文

摘要

Nano-ZnO thin films were prepared by oxygen- and argon-plasma-assisted thermal evaporation of metallic Zn at low temperature, followed by low-temperature annealing at 300 ℃ to 500 ℃ in oxygen ambient.X-ray diffraction patterns indicate that the nano-ZnO films have a polycrystalline hexagonal wurtzite structure.Raman scattering spectra demonstrate the existence of interface layers between Zn and ZnO.Upon annealing at 400 ℃ for 1 h, the interface mode disappears, and photoluminescence spectra show a very strong ultraviolet emission peak around 381 nm.The temperature-dependent PL spectra indicate that the UV band is due to free-exciton emission.