High Temperature Operation of 5.5μm Strain-Compensated Quantum Cascaded Lasers

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2005,（12）
• 页码范围: 3077-3079
• 页数: 3页
• 语种: 英文

摘要

We develop 5.5-μm Inx Ga1-xAs/InyAl1-yAs strain-compensated quantum cascade lasers with InP and InGaAs cladding layers by using solid-source molecular-beam epitaxy. Pulse operation has been achieved up to 323K (50℃) for uncoated 20-μm-wide and 2-mm-long devices. These devices display an output power of 36mW with a duty cycle of 1% at room temperature. In continuous wave operation a record peak optical power of 10mW per facet has been measured at 83 K.