SiCGe/SiC heterojunction and its MEDICI simulation of optoelectronic characteristics

• 来源期刊: 中国物理(英文版)
• 关键词: SiCGe/SiC heterojunction absorption coefficient
• 年，卷（期）: 2005,（6）
• 页码范围: 1255-1258
• 页数: 4页
• 语种: 英文

摘要

Optoelectronic characteristics of the SiC1-xGex /SiC heterojunction photodiode are simulated using MEDICI after the theoretical investigation of key properties for SiC1-xGex. The calculations show that SiC1-xGex /SiC with x-=0.3 may have a small lattice mismatch with 3C-SiC and a good response to the visible light and the near infrared light. The response spectrum of the SiC1-x Gex /SiC heterojunction photodiode, which consists of a p-type SiC1-xGex absorption layer with a doping concentration of 1 × 1015cm-3, a thickness of 1.6μm and x=0.3, has a peak of 250mA/W at 0.52μm and the peak can even reach 102mA/W at 0.7μm.