Effects of Techniques of Implanting Nitrogen into Buried Oxide on the Characteristics of Partially Depleted SOI PMOSFET

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2005,（3）
• 页码范围: 654-656
• 页数: 3页
• 语种: 英文

摘要

Effects of techniques of implanting nitrogen into buried oxide on the characteristics of the partially depleted silicon-on-insulator (SOI) p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) have beenstudied with three different nitrogen implantation doses, 8 × 1015, 2 × 1016, and 1 × 1017 cm-2.