Influence of Interface Charge on Electrical Properties of ZnO/Si Heterojunction

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2005,（1）
• 页码范围: 185-187
• 页数: 3页
• 语种: 英文

摘要

The capacitance-voltage and current-voltage properties of the samples before and after annealing are investigated at 300 K and 195K. It is found that the interface charge plays an important role for the heterojunction properties. After annealing, the samples exhibit typical junction properties. The heterojunction shows a built-in potential 0.62eV consistent with the theoretical result 0.67eV. However, the sample exhibits more complex behaviour before annealing. The experimental results can be explained by heterojunction theory when introducing interface charge, which suggests that the annealing can reduce interface charge and can improve the junction properties of the samples.