Nanostructuring of Si(100) by Normal-Incident Ar+ Ion Sputtering at Low Ion Flux

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2005,（2）
• 页码范围: 431-434
• 页数: 4页
• 语种: 英文

摘要

We investigate Si(100) surface morphology evolution under normal-incident Ar+ ions sputtering with low ion flux of 20μA/cm2. The results indicate that under the low flux ion sputtering, the nanostructuring process of Si(100) is governed by the Ehrlich-Schwoebel (ES) mechanism, rather than by the Bradley-Harper (BH) one for the case of high flux (normally the order of 102 μA/cm2 or larger). This work reveals that the ion flux plays an important role in the surface morphology evolution under ion sputtering, and a usually accepted classification that the ES mechanism is related to metal single-crystals under ion sputtering, while the BH one is to amorphous,and semiconductor targets is questionable.