Novel vertical stack HCMOSFET with strained SiGe/Si quantum channel

• 来源期刊: 中国物理（英文版）
• 关键词: strained SiGe/Si quantum well channel heterostructure CMOSFET poly-SiGe gate
• 年，卷（期）: 2006,（6）
• 页码范围: 1339-1345
• 页数: 7页
• 语种: 英文

摘要

A novel vertical stack heterostructure CMOSFET is investigated, which is structured by strained SiGe/Si with a hole quantum well channel in the compressively strained Si1-xGex layer for p-MOSFET and an electron quantum well channel in the tensile strained Si layer for n-MOSFET. The device possesses several advantages including: 1) the integration of electron quantum well channel with hole quantum well channel into the same vertical layer structure;2) the gate work function modifiability due to the introduction of poly-SiGe as a gate material; 3) better transistor matching; and 4) flexibility of layout design of CMOSFET by adopting exactly the same material lays for both n-channel and p-channel. The MEDICI simulation result shows that p-MOSFET and n-MOSFET have approximately the same matching threshold voltages. Nice performances are displayed in transfer characteristic, transconductance and cut-off frequency. In addition, its operation as an inverter confirms the CMOSFET structured device to be normal and effective in function.