The influence of SiNx substrate on crystallinity of μc-Si film used in thin film transistors

• 来源期刊: 中国物理（英文版）
• 关键词: μc-Si:H thin film SiNx substrate crystallinity bottom-gate TFT
• 年，卷（期）: 2006,（6）
• 页码范围: 1330-1334
• 页数: 5页
• 语种: 英文

摘要

This paper found that the crystalline volume ratio (Xc) ofμc-Si deposited on SiNx substrate is higher than that on 7059 glass. At the same silane concentration (SC) (for example, at SC=2%), the Xc of μc-Si deposited on SiNx is more the crystalline growth ofμc-Si thin film, which has been confirmed by atomic force microscope (AFM) observation.Comparing several thin film transistor (TFT) samples whose active-layer were deposited under various SC, this paper found that the appropriate SC for the μc-Si thin film used in TFT as active layer should be more than 2%, and Xcshould be around 50%. Additionally, the stability comparison of μc-Si TFT and a-Si TFT is shown in this paper.