Influences of quantum noises on direct-modulated properties of 1.3-μm InGaAsP/InP laser diodes

• 来源期刊: 中国物理（英文版）
• 关键词: InGaAsP/InP laser diodes carrier noise photon noise linear approximation method
• 年，卷（期）: 2006,（9）
• 页码范围: 2125-2129
• 页数: 5页
• 语种: 英文

摘要

Due to the zero dispersion point at 1.3μm in optical fibres, 1.3-μm InGaAsP/InP laser diodes have become main light sources in fibre communication systems recently. Influences of quantum noises on direct-modulated properties of single-mode 1.3-μm InGaAsP/InP laser diodes are investigated in this article. Considering the carrier and photon noises and the cross-correlation between the two noises, the power spectrum of the photon density and the signal-to-noise ratio (SNR) of the direct-modulated single-mode laser system are calculated using the linear approximation method. We find that the stochastic resonance (SR) always appears in the dependence of the SNR on the bias current density, and is strongly affected by the cross-correlation coefficient between the carrier and photon noises, the frequency of modulation signal, and the photon lifetime in the laser cavity. Hence, it is promising to use the SR mechanism to enhance the SNRof direct-modulated InGaAsP/InP laser diodes and improve the quality of optical fibre communication systems.