Growth of n-type ZnO thin films by using mixture gas of hydrogen and argon

• 来源期刊: 中国物理（英文版）
• 关键词: ZnO PLD heterostructure
• 年，卷（期）: 2006,（1）
• 页码范围: 199-202
• 页数: 4页
• 语种: 英文

摘要

High-quality oxide semiconductor ZnO thin films were prepared on single-crystal sapphire and LaAlO3 substrates by pulsed laser deposition (PLD) in the mixture gas of hydrogen and argon. Low resistivity n-type ZnO thin films with smoother surface were achieved by deposition at 600℃ in 1Pa of the mixture gas. In addition, ferromagnetism was observed in Co-doped ZnO thin films and rectification Ⅰ-Ⅴ curves were found in p-GaN/n-ZnO and p-CdTe/n-ZnO heterostructure junctions. The results indicated that using mixture gas of hydrogen and argon in PLD technique was a flexible method for depositing high-quality n-type oxide semiconductor films, especially for the multilayer thin film devices.