Structure and visible photoluminescence of Sm3+, Dy3+ and Tm3+ doped c-axis oriented AlN films

• 来源期刊: 中国物理（英文版）
• 关键词: photoluminescence Ⅲ-Ⅴ semiconductor thin film growth
• 年，卷（期）: 2006,（10）
• 页码范围: 2445-2449
• 页数: 5页
• 语种: 英文

摘要

Visible photoluminescence (PL) has been observed from rare earth (Tm, Sm and Dy)-doped AlN films grown by radio-frequency magnetron reactive sputtering. X-ray diffraction indicates that the films are c-axis-oriented hexagonal wurtzite type structure with an average crystal size of about 80-110 nm. Room-temperature PL spectra indicate that the blue emission is due to the transition of 1D2 to 3F4 and 1G4 to 3H6 intra 4f electron of Tm3+, the yellow emissions of AlN:Sm are due to 4G5/2 to the 6HJ (J = 5/2, 7/2, 9/2, 11/2) and the reddish emissions of AlN:Dy correspond to the 4F9/2 to 6HJ (J = 15/2, 13/2, 11/2 and 9/2) and 6F11/2 transitions.