Effect of substrate temperature on the growth and properties of boron-doped microcrystalline silicon films

• 来源期刊: 中国物理（英文版）
• 关键词: boron-doped μc-Si:H films VHF PECVD crystallinity carrier concentration Hall mobility
• 年，卷（期）: 2006,（1）
• 页码范围: 213-218
• 页数: 6页
• 语种: 英文

摘要

Highly conductive boron-doped hydrogenated microcrystalline silicon (μc-Si:H) films are prepared by very high frequency plasma enhanced chemical vapour deposition (VHF PECVD) at the substrate temperatures (Ts) ranging from 90℃ to 270℃. The effects of Ts on the growth and properties of the films are investigated. Results indicate that the growth rate, the electrical (dark conductivity, carrier concentration and Hall mobility) and structural (crystallinity and grain size) properties are all strongly dependent on Ts. As Ts increases, it is observed that 1) the growth rate initially increases and then arrives at a maximum value of 13.3 nm/min at Ts=210℃, 2) the crystalline volume fraction (Xc) and the grain size increase initially, then reach their maximum values at Ts = 140℃, and finally decrease, 3) the dark conductivity (σd),carrier concentration and Hall mobility have a similar dependence on Tg and arrive at their maximum values at Ts=190℃. In addition, it is also observed that at a lower substrate temperature Ts, a higher dopant concentration is required in order to obtain a maximum σd.