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This paper reports on the photoluminescence spectra of ZnSe single crystal with trace chlorine excited by the femtosecond laser pulse. Three emission bands, including second-harmonic-generation, two-photon-excited peak and a broad band at 500-700nm, were detected. The thermal strain induced by femtosecond pulse strongly influences the photoluminescence of ZnSe crystal. The corresponding strain e in ZnSe crystal is estimated to be about 8.8 × 10-3 at room temperature. The zinc-vacancy, as the main point defect induced by femtosecond pulse, is successfully used to interpret the broad emission at 500-700nm. The research shows that self-activated luminescence possesses the recombination mechanism of donor-vacancy pair, and it is also influenced by a few selenium defects and the temperature.The rapid decrease in photoluminescence intensity of two-photon-excited fluorescence and second-harmonic generation emission at lower temperature is attributed to the fact that more point defects result in the thermal activation of the two-photo-absorption energy converting to the stronger recombination emission of chlorine-zinc vacancy in 500-700nm. The experimental results indicate that the femtosecond exciting photoluminescence shows a completely different emission mechanism to that of He-Cd exciting luminescence in ZnSe single crystal. The femtosecond laser exhibits a higher sensitive to the impurity in crystal materials, which can be recommended as an efficient way to estimate the trace impurity in high quality crystals.
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篇名 The photoluminescence of ZnSe bulk single crystals excited by femtosecond pulse
来源期刊 中国物理(英文版) 学科
关键词 photoluminescence femtosecond pulse ZnSe crystal defects
年,卷(期) 2006,(10) 所属期刊栏目
研究方向 页码范围 2407-2414
页数 8页 分类号
字数 语种 英文
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研究主题发展历程
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photoluminescence
femtosecond pulse
ZnSe crystal
defects
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期刊影响力
中国物理B(英文版)
月刊
1674-1056
11-5639/O4
北京市中关村中国科学院物理研究所内
eng
出版文献量(篇)
17050
总下载数(次)
0
总被引数(次)
27962
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