Deep InP Gratings for Opto-Electronic Devices Etched by Cl2/CH4/Ar Inductively Coupled Plasma

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2006,（8）
• 页码范围: 2158-2160
• 页数: 3页
• 语种: 英文

摘要

Deep InP gratings are etched by Cl2/CH4/Ar inductively coupled plasma (ICP) at room temperature. A comparison is made between SiNx mask patterns formed by wet and dry etching. SF6 reactive ion etching is adopted for smooth and vertical sidewall. The etching conditions of Cl2/CH4/Ar ICP are optimized for high anisotropy,and a 1.7-μm-deep InP grating with an aspect ratio of 10:1 is demonstrated. The technique is then used for the fabrication of 1.55-μm laterally coupled distributed feedback AlGaInAs-InP laser.