Characteristics of High In-Content InGaN Alloys Grown by MOCVD

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2006,（12）
• 页码范围: 3369-3372
• 页数: 4页
• 语种: 英文

摘要

InN and In0.46 Ga0.54N films are grown on sapphire with a GaN buffer by metalorganic chemical vapour deposition (MOCVD). Both high resolution x-ray diffraction and high resolution transmission electron microscopy results reveal that these films have a hexagonal structure of single crystal. The thin InN film has a high mobility of 475 cm2 V- 1 s- 1 and that of In0.46 Ga0.54N is 163 cm2 V- 1 s- 1. Room-temperature photoluminescence measurement of the InN film shows a peak at 0.72eV, confirming that a high quality InN film is fabricated for applications to full spectrum solar cells.